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STP70NS04ZC
N-channel clamped 8m - 80A TO-220 Fully protected SAFeFETTM Power MOSFET
Features
Type STP70NS04ZC

VDSS Clamped
RDS(on) < 10m
ID 80A
Low capacitance and gate charge 100% avalanche tested 175C maximum junction temperature
TO-220
3 1 2
Description
This fully clamped Power MOSFET is produced by using the latest advanced company's Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
Internal schematic diagram
Applications
Switching applications - ABS, solenoid drivers - Motor control - Dc-dc converters
Order code
Part number STP70NS04ZC Marking P70NS04ZC Package TO-220 Packaging Tube
May 2007
Rev 1
1/13
www.st.com 13
Contents
STP70NS04ZC
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ........................... 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STP70NS04ZC
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDG VGS ID (2) ID
(2)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) drain-gate voltage Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain gate current (continuous) Gate-source current (continuous) Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 33 (1) 33
(1) (1)
Unit V V V A A A A A W W/C kV kV kV C
20
80 63 50 50 320 180 1.2 8 8 8 -55 to 175
IDG IGS IDM (3) PTOT
VESD(G-S) VESD(G-D) VESD(D-S) TJ Tstg
Gate-source ESD (HBM-C=100pF, R=1.5K) Gate-drain ESD (HBM-C=100pF, R=1.5K) Drain-source ESD (HBM-C=100pF, R=1.5K) Operating junction temperature Storage temperature
1. Voltage is limited by zener diodes 2. Current limited by wire bonding 3. Pulse width limited by safe operating area
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.83 62.5 300 Unit C/W C/W C
Table 3.
Symbol IAS EAS
Avalanche data
Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50V) Value 30 720 Unit A mJ
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Electrical characteristics
STP70NS04ZC
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DG IDSS IGSS VGSS VGS(th) RDS(on)
On/off states
Parameter Clamped voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = 16V VGS = 10V IGS =100A VDS= VGS, ID = 1mA VGS= 10V, ID= 40A 18 2 3 8 4 11 Min. 33 1 2 Typ. Max. Unit V A A V V m
Table 5.
Symbol gfs (1) Ciss Coss Crss tr(Voff) tf tc Qg Qgs Qgd RG
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Off voltage rise time Fall time Cross-over time Total gate charge Gate-source charge Gate-drain charge Internal gate resistor Test conditions VDS =15V, ID = 30A Min. Typ. 35 1930 700 230 110 90 140 58 14 26 14 Max. Unit S pF pF pF ns ns ns nC nC nC
VDS =25V, f=1 MHz, VGS=0
VCLAMP=32V, ID=60A, VGS=10V, RG=4.7 (see Figure 14) VDD=32V, ID = 60A VGS =10V (see Figure 15)
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP70NS04ZC
Electrical characteristics
Table 6.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/s, VDD= 30 V, Tj=150C (see Figure 19) 90 0.18 4 Test conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A
VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP70NS04ZC
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STP70NS04ZC Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
Figure 12. Normalized BVDSS vs temperature
7/13
Electrical characteristics Figure 13. Normalized IDSS vs temperature
STP70NS04ZC
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STP70NS04ZC
Test circuit
3
Test circuit
Figure 15. Gate charge test circuit
Figure 14. Switching times test circuit for resistive load
Figure 16. Test circuit for inductive load Figure 17. Unclamped Inductive load test switching and diode recovery times circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
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Package mechanical data
STP70NS04ZC
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STP70NS04ZC
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Revision history
STP70NS04ZC
5
Revision history
Table 7.
Date 04-May-2007
Revision history
Revision 1 First release Changes
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STP70NS04ZC
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